NTMS4840N
Power MOSFET
30 V, 7.5 A, Single N ? Channel, SOIC ? 8
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? SOIC ? 8 Surface Mount Package Saves Board Space
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? DC ? DC Converters
? Printers
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(on) Max
24 m W @ 10 V
36 m W @ 4.5 V
N ? Channel
D
I D Max
7.5 A
Rating
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
30
± 20
Unit
V
V
Continuous Drain
Current R q JA (Note 1)
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
I D
P D
5.5
4.4
1.14
A
W
G
S
T A = 70 ° C
Continuous Drain
Current R q JA (Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JA t < 10 s
(Note 1)
Power Dissipation
R q JA t < 10 s (Note 1)
Pulsed Drain Current
T A = 25 ° C
Steady
State T A = 25 ° C
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 25 ° C,
t p = 10 m s
I D
P D
I D
P D
I DM
4.5
3.5
0.68
7.5
6.0
1.95
38
A
W
A
W
A
1
SO ? 8
CASE 751
STYLE 12
MARKING DIAGRAM
& PIN ASSIGNMENT
1 8
Source Drain
Source Drain
Source Drain
Gate Drain
Top View
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy T J = 25 ° C, V DD = 30 V, V GS = 10 V,
I L = 7.5 A pk , L = 1.0 mH, R G = 25 W
T J , T STG
I S
EAS
? 55 to
+150
2.0
28
° C
A
mJ
S4840
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb ? Free Package
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
THERMAL RESISTANCE RATINGS
T L
260
° C
ORDERING INFORMATION
Shipping ?
Device
Package
Rating
Junction ? to ? Ambient – Steady State (Note 1)
Symbol
R q JA
Max
110
Unit
NTMS4840NR2G
SOIC ? 8
(Pb ? Free)
2500/Tape & Reel
° C/W
Junction ? to ? Ambient – t ≤ 10 s (Note 1) R q JA 64
Junction ? to ? FOOT (Drain) R q JF 40
Junction ? to ? Ambient – Steady State (Note 2) R q JA 183.5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2009
September, 2009 ? Rev. 1
1
Publication Order Number:
NTMS4840N/D
相关PDF资料
NTMS4872NR2G MOSFET N-CH 30V 6A 8-SOIC
NTMS4873NFR2G MOSFET N-CH SGL 30V 8-SOIC
NTMS4916NR2G MOSFET N-CH 30V 11.4A SO8 FL
NTMS4917NR2G MOSFET N-CH 30V 10.2A SO8 FL
NTMS4920NR2G MOSFET N-CH 30V 10.6A 8SOIC
NTMS4935NR2G MOSFET N-CH 30V 10A 8SOIC
NTMS4937NR2G MOSFET N-CH 30V 8.6A 8SOIC
NTMS4N01R2G MOSFET N-CH 20V 3.3A 8-SOIC
相关代理商/技术参数
NTMS4872N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 10.2 A, N−Channel, SO−8
NTMS4872NR2G 功能描述:MOSFET NFET SO8 30V 10.2A 13.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4873NF 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 11.5 A, N−Channel, SO−8
NTMS4873NFR2G 功能描述:MOSFET NFET SO8 30V 11.7A 12MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4916N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 11.6 A, N?Channel, SO?8 Low RDS(on) to Minimize Conduction Losses
NTMS4916NR2G 功能描述:MOSFET NFET SO8 30V 11.4A 9MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4917N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 10.5 A, N?Channel, SO?8 Low RDS(on) to Minimize Conduction Losses
NTMS4917NR2G 功能描述:MOSFET NFET SO8 30V 10.2A 11MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube